Acronym |
Full Name |
SFAN3 |
Surface pick first arrival time, T2R1 |
HWV |
Acoustic multiplex waveform |
ECHO |
Amplitude of echo train |
AHECEF |
Array Induction End Of Casing Effect Flag |
RGMN |
MRIL minimum ringing amplitude |
DPEM |
Photoelectric Cross Section, Memory |
A2TN |
Attenuation derived from P2HS and R2AT |
RILD |
Deep induction resistivity |
UU |
Volumetric Photoelectric Factor, Up |
RPCSH |
Resistivity Phase Diff Compensated Borehole Corrected Short 2MHz |
CRMR |
Enhanced processing medium real conductivity |
PO2C |
Partial porosity from MRIL (single element) |
CRMQ |
Enhanced processing medium quad conductivity |
E1RD |
Channel 1 (real) echo amplitudes scaled by calib. factor |
HRSU |
HALS Uncorrected High Resolution Shallow Resistivity |
DGN |
Dipole multiplex waveform gain |
TRYST02 |
Y-axis dipole multiplex waveform start time |
TYYGN11 |
Y-y axis dipole multiplexed gains |
RACVL |
Resistivity Attenuation Compensated Borehole and Inversion Corrected Long 400kHz |
A16H_UNC |
ARC Uncorrected Attenuation Resistivity for 16 inch Spacing at 2 MHz |
NPEM |
Neutron Porosity Time Since Drilled, Memory |
RLA2 |
Apparent Resistivity from Computed Focusing Mode 2 |
RLA4 |
Apparent Resistivity from Computed Focusing Mode 4 |
HPCP |
HP temperature corrected pressure |
RPCSL |
Resistivity Phase Diff Compensated Borehole Corrected Short 400kHz |